METHOD OF FORMING PEROVSKITE-LIKE MATERIAL FILM Russian patent published in 2019 - IPC H01L31/18 

FIELD: electrical engineering.

SUBSTANCE: invention relates to production of photoelectric converters. Method of forming a film of perovskite-like material with general formula ABX₃ includes depositing on the substrate a layer of perovskite-like material of a predetermined thickness, after which halogen is applied on layer until partial or complete liquefaction of said layer is achieved, after which excess halogen is completely removed from layer ABX₃ with provision of gradual crystallisation of perovskite-like material on the substrate with formation of grains of perovskite-like material of size greater than in the initial layer.

EFFECT: invention enables to improve the quality of semiconductor films, increase grain size, improve electrical, photoelectric properties of thin films of light-absorbing materials with a perovskite-like structure of ABX₃ composition_, as well as improvement of physical structure of films without unacceptable change of chemical composition and properties of initial films.

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