METHOD FOR PRODUCTION OF CRYSTAL MATERIAL FILM BASED ON COMPLEX HALOGENIDES WITH PEROVSKITE-LIKE STRUCTURE Russian patent published in 2022 - IPC C23C28/00 C23C22/02 C23C26/02 H01L31/18 H01L51/42 

FIELD: materials science.

SUBSTANCE: invention relates to the field of material science, namely to a technology for the production of crystal material films based on complex halogenides with a perovskite-like structure, which can be used for the production of semiconductor (solar elements) and optoelectronic (light-emitting) devices. The method includes following stages: I) formation of a layer of a reagent B or B' on a substrate carrier with an upper layer made of material inert relatively to reagents B or B', AX, and X₂; II) application of reagents AX and X₂ to the surface of the layer of the reagent B or B'; III) provision of flowing a reaction conversion of applied reagents to obtain organo-inorganic complex halogenide (OICH). At the same time, B is Pb, Sn, Bi, Cu metal, or a mixture thereof, B' is halogenide, chalcogenide, nitrate, carbonate, or oxide of B, AX is organic or inorganic halogenide, where inorganic, organic cations, as well as mixtures thereof, are used as the component A, and X₂ is one of molecular halogens I₂, Br₂, Cl₂, or a mixture thereof. Moreover, at the stage III), substrate with reagents applied at stages I) and II) is placed into a reaction chamber to control a speed of reagent removal for a time providing complete, more than 90%, chemical conversion of the reagent B or B', while the maximum distance h from substrate to upper boundary of the chamber does not exceed 0.8 mm.

EFFECT: provision of a possibility of flowing a complete reaction between precursors without the use of an additional stage of supply of a reagent (halogen) due to control of a speed of reagent removal from a system during synthesis, due to which the claimed technical solution allows for the production of films with optimal morphology (a reduced number of through holes in film) and optimal phase composition (absence of impurities), as well as increase in an average size of crystallites in film and life time of photo-induced charge carriers, which contributes to an increase of efficiency of photovoltaic devices based on such films.

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