METHOD FOR PRODUCTION OF FILM OF ORGANO-INORGANIC COMPLEX HALOGENIDE Russian patent published in 2022 - IPC C23C26/00 H01L51/48 H01L31/216 

FIELD: materials science.

SUBSTANCE: invention relates to the field of material science, namely to a method for the production of film of organo-inorganic complex halogenide with a perovskite-like structure. The specified film can be used for the production of semiconductor devices. At the first stage, a layer of a reagent B or B' in the form of film is formed on the upper layer of substrate, made of material inert relatively to reagents B or B', AX, and X₂. At the second stage, the surface of the layer of the reagent B or B' is brought into interaction with reagents AX and X₂. At the third stage, the reaction conversion of applied reagents is provided. For the implementation of the second stage, substrate with the mentioned film is immersed in a solution of a mixture of reagents AX and X₂ in an organic solvent. Substrate is kept until the reaction conversion is completed with provision of a reaction of B + AX + X₂ → A_nBX_(nz+k) or B' + AX + X₂ → A_nBX_(nz+k) + Y'. At the same time, B is metal, B' is oxide or salt of B, AX is halogenide, X₂ is molecular halogen, A is organic cation or a mixture of organic and inorganic cations. A_nBX_(nz+k) is organo-inorganic complex halogenide (OICH), Y' is a side product of the reaction, z = 1, 2; k = 2, 3, 4; 0<n≤4, including non-integer values of n.

EFFECT: increase in homogeneity of the resulting films of organo-inorganic complex halogenides is provided due to the reduction in a number of through holes and reduction in roughness of a film surface, which contributes to an increase in the efficiency of films, when they are used as light-absorbing material in thin-film solar cells.

15 cl, 4 dwg, 3 tbl, 5 ex