METHOD OF PRODUCING THIN-FILM HALOGENIDE SEMICONDUCTOR STRUCTURES (VERSIONS) Russian patent published in 2019 - IPC C23C28/00 C30B29/12 H01L51/44 

FIELD: manufacturing technology.

SUBSTANCE: invention relates to material science, specifically to production of thin films or contact microprinting planar structures of halide semiconductors of compound ABX₃, including with organic cations, which can be used as light-absorbing layer in solid-state, including thin-film, flexible or tandem solar cells or for creation of light-emitting devices. Method of producing thin-film structures of hybrid halide semiconductors of compound ABX₃, which include component A in form of singly-charged cation A⁺, selected from methyl ammonium CH₃NH₃⁺, formamidinium (NH₂)₂CH⁺, guanidinium C (NH₂)₃⁺, Cs⁺, Rb⁺, as well as mixtures thereof, component X in form of singly-charged anion X^-, selected from Cl^-, Br^-, I^-, as well as mixtures thereof, and component B in form of a polyvalent cation selected from Pb, Sn, Bi, as well as mixtures thereof, on the surface of the auxiliary substrate, a process solid sacrificial layer is formed, which is a composite material made from a polymer matrix with a uniformly distributed component AX or a mixture of AX and X₂, separately on the carrier substrate a uniform layer of the precursor B of the component is formed, the sacrificial layer is brought into contact with the layer of the precursor B and held for a period of time, which ensures the complete reaction conversion of the layer of the precursor of component B when reacting with precursors of AX or a mixture of AX and X₂ into ABX₃ compound layer, after which sacrificial layer is removed.

EFFECT: simple and high technological effectiveness of the formation of thin-film structures owing to use of reaction components in the solid layer composition, and not in a liquid form, as well as enabling controlled application of components of AX and X₂ due to diffusion mode of conversion reaction, which improves reproducibility of disclosed method.

16 cl, 2 dwg, 4 ex