FIELD: chemical or physical processes.
SUBSTANCE: invention relates to the technology of semiconductor thin-film hybrid photoconverters. Hybrid thin-film photoconverters with heterojunctions and layers modified maxenes Ti3C2Tx, operating in the visible spectrum of sunlight, as well as near UV and IR regions (300–780 nm). According to the invention, the hybrid thin-film photoconverter comprises a transparent substrate, which is successively coated with a transparent electrode and a photoactive layer located between transport selective conductive layers p and n type of the conductivity, on the upper of which there is an opaque electrode, wherein the photoactive layer is made of hybrid perovskites APbX3, where: A are organic or inorganic cations of the type (CH3NH3+; CH5N2+; Cs+; CH6N3+; (NH3)BuCO2H+), X3 – halogen elements of row 1; Br; Cl, and on all boundaries of heterojunctions and on boundaries of metal-semiconductor layers of maxenes Ti3C2Tx are located, with thickness of 5–50 nm, where: Tx – functional groups, by which surface of two-dimensional materials is terminated, Tx = O-, OH-, F-.
EFFECT: technical result of present invention is increase in efficiency by increasing no-load voltage of devices by more than 10 % to values > 1,10 V, as well as increasing filling factor of current-voltage characteristics of devices by more than 5 % (> 0,75) by reducing current shunting leaks and increasing contact resistance.
9 cl, 2 dwg
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Authors
Dates
2019-07-09—Published
2018-12-25—Filed