METHOD FOR ENCAPSULATING PHOTODETECTORS BASED ON HALIDE PEROVSKITES Russian patent published in 2023 - IPC H01L31/48 C23C14/46 B32B7/23 B32B7/04 

FIELD: manufacture of semiconductors.

SUBSTANCE: invention can be used in production of semiconductor device structures of photodetectors, such as solar cells, photodiodes, and detectors. Encapsulation of photodetectors based on halide perovskites is carried out by applying a dielectric sealing layer to a device structure containing an anode, a selective transport layer of p-type conductivity, a photoabsorbing layer, a selective transport layer of n-type conductivity, a hole-blocking layer and a cathode placed sequentially on the substrate. The substrate is moved along the lateral axes. A dielectric sealing layer, which is a nanocrystalline film of Al₂O₃, SiN_x or SiO_x, is applied by the ion-beam method at a pressure of 10^-1-10^-6 Pa, generating in an ion source located in a vacuum chamber a plasma beam at a voltage not more than 3000 V in the form of high-energy particles of inert gases aimed at ceramic or metal targets, sputtering them with an energy not exceeding 1500 eV, introducing an oxidizing gas if necessary. The application rate of the dielectric sealing layer can reach 10-45 nm/min.

EFFECT: stability of the device characteristics of photodetectors based on halide perovskites increases when exposed to light, elevated temperatures and humidity.

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