METHOD FOR OBTAINING SEMICONDUCTOR THIN-FILM PHOTOCONVERTERS BASED ON HALIDE PEROVSKITES Russian patent published in 2022 - IPC H01L51/42 H01L51/46 

Abstract RU 2775160 C1

FIELD: semiconductors.

SUBSTANCE: invention relates to the technology of semiconductor thin-film hybrid photoconverters and can be used to create solar cells and batteries based on halide perovskites. A method for producing semiconductor thin-film photoconverters based on halide perovskites is that in a photoconverter containing an anode electrode placed in series on a substrate, a selective transport layer of p-type conductivity, a photoabsorbing layer, a selective transport layer of n-type conductivity and a cathode electrode, by the liquid-phase method, a buffer layer is applied between the selective transport layer of n-type conductivity and the cathode electrode, made in the form of a composite made by dispersing Ti3C2Tx maxenes, where Tx is a mixture of functional groups F-, Cl-, O-, OH-, at their concentration from 0.50 mg/ml to 0.75 mg/ml in dilute solutions of low molecular weight organic semiconductors in organic dehydrated solvents with a concentration of 0.5 mg / ml.

EFFECT: invention provides a multiple increase in the stability of instrumental characteristics of photoconverters when exposed to light and elevated temperatures.

6 cl, 4 tbl, 9 dwg, 3 ex

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RU 2 775 160 C1

Authors

Yakusheva Anastasiya Sergeevna

Saranin Danila Sergeevich

Muratov Dmitrij Sergeevich

Luchnikov Lev Olegovich

Gostishchev Pavel Andreevich

Kuznetsov Denis Valerevich

Didenko Sergej Ivanovich

Aldo Di Karlo

Dates

2022-06-28Published

2021-11-16Filed