NANOSCALE ELEMENT OF DIGITAL LOGIC Russian patent published in 2021 - IPC H01L39/16 B82B1/00 

FIELD: micro- and nanoelectronics.

SUBSTANCE: invention relates to micro-and nanoelectronics, namely to digital devices, in particular to the design of a logic gate that implements the conjunction operation, and can be used in the creation of digital integrated circuits with elements of submicron and nanometer sizes. The proposed nanoscale element of the digital logic, including connecting to the power source in parallel superconducting nanowires containing resistive areas, while it provides the bulk of the nanowires with a resistive portion and with a narrowed area, which is located near the resistive sections of the two nanowires-gate, and an output cable from the resistive portion and with reducing land located near the areas of the main resistive nanowires parallel to him, the distance between the narrowed areas and resistive sections, and their resistances are set so that the magnitude of the current flowing through the primary nanowires when the reference voltage was insufficient to move the narrowed area of the nanowires in the normal state, and the capacity allocated at the same time on resistive area of the nanowires was sufficient to warm neighboring narrowed plot the output of the nanowires for its transition to the normal state, in this case the generated heat on both the resistive parts of the nanowire-gates should be enough to warm neighboring the narrowed area of the nanowires for its transition to the normal state, and the power given only on any one of the two RC sections, enough to move this narrowed area in the normal state, while the transition of the narrowed area of the nanowires to the normal state capacity on resistive area of the nanowires, enough to heat a nearby narrowed plot the output of the nanowires for its transition to the normal state, and the resistance of the resistive phase of the output of the nanowires choose from the conditions of its flow currently is less than the critical narrowed plot the output of the nanowires when applying the reference voltage and highlight it enough heat to initiate the transition to normal state of the narrowed area adjacent nanowires next item, but it is not sufficient to warm up the narrowed section of the neighboring nanowire of the next element when the narrowed area of the output nanowire passes to the normal state.

EFFECT: invention makes it possible to create a nanoscale logic element "AND" (gate) for digital devices with low power consumption, high speed and with no galvanic connection between the switched elements.

1 cl, 1 dwg