NANOSIZED LOGICAL DEVICE Russian patent published in 2021 - IPC H01L39/16 B82B1/00 

FIELD: semiconductor microelectronics.

SUBSTANCE: invention relates to semiconductor microelectronics and nanoelectronics and can be used to create logic integrated circuits with nanometer-sized elements. A nanoscale logic device is proposed that includes parallel superconducting nanowires containing resistive sections connected to a voltage source, while it contains a main nanowire with a resistive section and two consecutively located narrowed sections, near each of which there is a resistive section of one of the two nanowire-gates, and also parallel to the main nanowire there is an output nanowire containing a narrowed and resistive sections, while its narrowed section is located near the resistive section of the main nanowire, and the resistances of the resistive sections of the gates are selected so that, at a set current through the main nanowire, the power released in any of the gate nanowires resistive sections, would be sufficient to warm up the adjacent narrowed section of the main nanowire to initiate its transition to the normal state, and the current in the main nanowire in the case when its narrow section is in the superconducting state, should be less than the critical current for the narrowed sections of the main nanowire, while the power released in the resistive section of the main nanowire is sufficient to warm up the adjacent narrowed section of the output nanowire for its transition to the normal state, and in the case when one or two narrowed sections of the main nanowire are in a normal state due to being hot via the heat from one or two gates, the power released in the resistive section of the main nanowire is insufficient to warm up the neighboring section of the output nanowire for its transition to the normal state; in this case, the resistance of the resistive section of the output nanowire is selected from the condition of the current flowing in it being less than the critical number for the narrowed section of the output nanowire when the reference voltage is applied and a sufficient amount of heat is released on it to initiate a transition to the normal state of the narrowed section of the adjacent nanowire of the next logical element, but insufficient for this when the narrowed section of the output nanowire passes into the normal state.

EFFECT: creation of a nanoscale logic device OR for digital circuits with low power consumption, high speed and no galvanic connection between the switched elements.

1 cl, 1 dwg