FIELD: chemical or physical processes.
SUBSTANCE: invention relates to gas-phase deposition of tantalum coatings on articles surface and can be used to create protective coatings, for example, on gun barrels, print heads of jet devices, biomedical implants, as well as for making coatings in microelectronics, for example, as diffusion barrier between copper and silicon, as a gate electrode in semiconductor field-effect transistors. Method of gas-phase deposition of tantalum on surface of steel item includes supply of tantalum halide vapors and reducing agent vapors to surface of steel item. Reducing agent used is cadmium, zinc, magnesium or aluminum. Tantalum halogenide vapor and the reducing agent vapor are transported to the steel article surface in the inert carrier gas streams separately. Prior to deposition on surface of steel item mixing of said vapors of tantalum halogenide and reducing agent vapors in ratio from 1:1 to 1:10 and their heating to 500–1400 °C. In particular cases, tantalum bromide is used as tantalum halogenide. Tantalum halogenide used is tantalum iodide, iodine vapors are added to tantalum iodide stream. Tantalum coating is deposited on the surface of articles in a non-hydrogen atmosphere at relatively low deposition temperatures.
EFFECT: improved quality of coatings, safe operation and reduced requirements for equipment.
3 cl, 1 dwg, 1 ex
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Authors
Dates
2019-07-31—Published
2018-08-07—Filed