METHOD OF PRODUCING "SILICON ON INSULATOR" SUBSTRATE AND "SILICON ON INSULATOR" SUBSTRATE Russian patent published in 2017 - IPC H01L21/762 

FIELD: electricity.

SUBSTANCE: method of producing SOI-substrate and SOI-substrate, where method includes establishing a structured layer of etch solution stop in layer of the first silicon substrate oxide, binding surface with a structured layer of etch solution stop of the first silicon substrate, with the surface of the second silicon substrate, and deleting a part of the first silicon substrate for generating structured SOI substrate.

EFFECT: improving the characteristics and increasing the reliability of instruments produced on the substrate.

20 cl, 7 dwg