FIELD: microelectronics.
SUBSTANCE: proposed structure that that may be found useful for designing and developing various semiconductor devices characterized in definite electrophysical parameters for semiconductor-insulator interphase boundaries has chemical combinations of one or more elements used as interlayer and included in semiconductor composition. Chemical combinations are chosen so as to ensure that sum of their normalized volumes were lower than that of semiconductor by 1-15A3.
EFFECT: improved electrophysical parameters of structure.
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