PLANAR ELECTRON EMITTER Russian patent published in 2004 - IPC

FIELD: electronics. SUBSTANCE: planar electron emitter comprises body of own semiconductor or dielectric with non-zero forbidden zone. Body of macroscopic thickness ( - 1.0 mm ) is limited by two parallel surfaces. Emitter also has assemblage of two electrodes precipitated/grown on two mentioned free surfaces. With application of weak external electric field (- 100 V/cm ) structure incorporating two electrodes and mentioned semiconductor or dielectric body confined between them greater share of electrons injected into mentioned semiconductor or dielectric body from negatively charged electrode ( cathode ) demonstrates quasi-ballistic properties, that is, this share of injected electrons is accelerated in mentioned semiconductor or dielectric body not experiencing any noticeable energy losses. As result electrons reach positively charged electrode ( anode ) with sufficient energy and corresponding pulse to pass through mentioned anode and get out of above-mentioned structure into vacuum. In this case mentioned semiconductor or dielectric body includes material or complex of materials possessing specified crystallographic orientation. EFFECT: low power dissipation, simplified design of emitter, increased density of electron emission current, capability to operate at room temperature. 50 cl, 24 dwg