FIELD: physics.
SUBSTANCE: method includes preliminary local electric contact heating of a billet along a helical trajectory by an external source of heat with controlled temperature till achievement of phase transition temperature in a sheared layer with subsequent cooling and cutting of allowance. Electric contact heating of sheared layer is carried out by means of contact element oriented along normal to billet axis, short-circuit currents arising at point of contact of contacting element with surface of processed billet. At that, force of current passed through the contacting element is selected, and speed of its movement providing phase transition to the allowance depth cut in one pass during further processing, and inclination angle of the electric contact interaction line is set more than 21°.
EFFECT: achieving stable segmentation of chips.
1 cl, 4 dwg, 2 tbl
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0 |
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Authors
Dates
2019-08-02—Published
2018-05-17—Filed