A CRUCIBLE FOR GROWING OXIDE MONOCRYSTALS Russian patent published in 1997 - IPC

Abstract RU 2072003 C1

FIELD: growing crystals. SUBSTANCE: crucible is made in the form of truncated cone. Ratio of its difference of diameters to its height is 0.1- 0.2. Such ratio provides slope of crucible walls 6-12 deg. Obtained are crystals of Bi₁₂GeO₂₀, Bi₁₂SiO₂₀, and Bi₄Ge₃O₁₂ with diameter greater than 60 mm and which manifested lack of second phase inclusion on 2/3 of length of ingot. EFFECT: improved equipment. 1 dwg

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RU 2 072 003 C1

Authors

Denisov V.M.

Buzovkina N.V.

Dates

1997-01-20—Published

1991-10-17—Filed