METHOD OF PRODUCING GRAPHENE IN LOW TEMPERATURE CONDITIONS Russian patent published in 2019 - IPC C01B32/188 B82Y40/00 B82B3/00 

FIELD: chemistry.

SUBSTANCE: invention relates to nanoelectronics, spintronics, automotive industry, biomedicine, aerospace sector and can be used for average production of graphene-containing composite materials and logic components of devices. Catalyst layer of metal of group VIII metal of 4th period with thickness of 16 nm is applied on substrate from highly oriented pyrolytic graphite. Then annealing is carried out in conditions of ultrahigh vacuum at temperatures from 300 to 350 °C for not less than 15 minutes. Graphene obtained under low temperature conditions is analysed by X-ray photoelectron spectroscopy (XPS). Crystal structure of graphene is investigated by methods of diffraction of slow electrons (DSE) and scanning electron microscopy (SEM). When nickel is used as metal of Group VIII of 4th period, annealing is performed at 300 °C, and when using cobalt - at 350 °C.

EFFECT: invention reduces the number of differently directed graphene domains per unit area by factor of 1 to 5.

3 cl, 5 dwg, 2 ex