FIELD: microstructure technology.
SUBSTANCE: invention relates to a silicon-based component characterized by at least one reduced contact surface which, obtained by using a method combining at least one step of etching the inclined sidewall with etching of vertical side walls from Bosch, improves, in particular, tribology of components obtained as a result of mechanical micromachining of plate on silicon base.
EFFECT: invention discloses a micromechanical component characterized by a reduced contact surface and a method for production thereof.
8 cl, 12 dwg
Title | Year | Author | Number |
---|---|---|---|
SILICON-BASED COMPONENT HAVING AT LEAST ONE CHAMFER AND A METHOD FOR PRODUCTION THEREOF | 2016 |
|
RU2710522C1 |
METHOD OF PROFILED SILICON STRUCTURES MANUFACTURING | 2019 |
|
RU2730104C1 |
METHOD FOR ANISOTROPIC PLASMA ETCHING OF SILICON MICROSTRUCTURES IN NITRIDIZATION AND ETCHING CYCLIC PROCESS | 2022 |
|
RU2796239C1 |
METHOD OF ANISOTROPIC PLASMA ETCHING OF SILICON MICROSTRUCTURES IN A CYCLIC TWO-STEP OXIDATION-ETCHING PROCESS | 2018 |
|
RU2691758C1 |
METHOD OF FORMING DEEPLY PROFILED SILICON STRUCTURES | 2018 |
|
RU2691162C1 |
ETCHING METHOD AND ETCHING SYSTEM | 2005 |
|
RU2332749C1 |
MICROMECHANICAL COMPOSITE ELEMENT AND METHOD OF ITS FABRICATION | 2010 |
|
RU2544289C2 |
METHOD FOR DEEP ANISOTROPIC PLASMA ETCHING OF SILICON STRUCTURES | 2024 |
|
RU2824746C1 |
METHOD FOR MANUFACTURING A MATRIX OF FIELD-EMISSION TUBULAR CATHODES BASED ON DOPED NANOCRYSTALLINE DIAMOND FILMS | 2022 |
|
RU2784410C1 |
METHOD FOR PRODUCING SUBMICRON AND NANOMETRIC STRUCTURE | 2005 |
|
RU2300158C1 |
Authors
Dates
2019-11-28—Published
2016-06-24—Filed