METHOD OF PROFILED SILICON STRUCTURES MANUFACTURING Russian patent published in 2020 - IPC H01L21/302 

Abstract RU 2730104 C1

FIELD: instrument engineering.

SUBSTANCE: invention relates to instrument-making and can be used in making silicon resilient elements of micromechanical sensors, such as pressure, acceleration and angular velocity sensors. In the method of forming shaped silicon structures, which consists in forming a relief by alternating anisotropic and isotropic methods of etching a silicon structure, after anisotropic and isotropic etching, a thin layer is removed by thermal oxidation and removal of silicon oxide from the obtained relief.

EFFECT: invention increases quality factor of micromechanical elastic elements by forming a relief with a surface structure maximally close to ideal crystalline surface with no defects of its surface.

1 cl, 4 dwg

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Authors

Pautkin Valerij Evgenevich

Mishanin Aleksandr Evgenevich

Krajnova Olga Mikhajlovna

Lifanova Aniya Zinnatullovna

Dates

2020-08-17Published

2019-12-20Filed