METHOD FOR PLASMA CHEMICAL ETCHING OF SILICON Russian patent published in 2024 - IPC H01L21/3065 

Abstract RU 2828437 C1

FIELD: chemical or physical processes.

SUBSTANCE: invention relates to a method for vacuum plasma-chemical etching of silicon plates. Silicon plates are loaded into the reaction chamber, the reactor is evacuated, gases containing carbon and fluorine are fed into the reaction chamber, and plasma-chemical etching is carried out in said medium. Said gases are the main etching gas in the form of sulfur hexafluoride SF6 and the etching inhibitor gas in the form of octafluorocyclobutane C4F8. During plasma-chemical etching in situ, intensity of emission spectral lines of carbon and fluorine is measured in plasma without stopping the etching process. Parameter X is calculated, which is equal to the ratio of the radiation intensity of the emission spectral line of carbon with wavelength of 517.1 nm to the sum of intensities of the emission spectral lines of fluorine with wavelengths of 685.8 nm and 703.9 nm. Then, the corresponding value of the silicon etching profile angle is obtained from the said intensity ratio using the calculated parameter X. Said intensities depend on flow rates of said gases fed into reaction chamber. Adjustment of the degree of polymerisation of the gas medium and adjustment of the angle of the obtained profile during etching of silicon plates is ensured by changing the flow rates of said gases using gas flow rate regulators.

EFFECT: higher accuracy of etched structures in silicon.

1 cl, 5 dwg, 1 tbl

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RU 2 828 437 C1

Authors

Osipov Artem Armenakovich

Endiyarova Ekaterina Vyacheslavovna

Fumina Alina Evgenevna

Dates

2024-10-11Published

2023-11-15Filed