FIELD: process engineering.
SUBSTANCE: proposed invention consists in making of the substrate and etching of at least one image to mid ply. Then, insulating coating is applied to substrate top surface. Said coating and said mid ply are subjected to directed etching. Now, at electrode connection to conducting substrate bottom ply, electrical deposition is executed and composite component is removed from said substrate.
EFFECT: better tribological properties of silicon, simplified process, application of high-resilience components.
14 dwg
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