LOW-TEMPERATURE TWO-STAGE OPERATIONAL AMPLIFIER WITH PARAPHASE OUTPUT ON COMPLEMENTARY FIELD-EFFECT TRANSISTORS WITH CONTROL P-N JUNCTION Russian patent published in 2020 - IPC H03F3/34 

Abstract RU 2721942 C1

FIELD: radio engineering; analogue microelectronics.

SUBSTANCE: invention relates to radio engineering and analogue equipment. Low-temperature two-stage operational amplifier comprises power supply bus, reference current source, output field-effect transistors, wherein as all the above field-effect transistors use field-effect transistors with control p-n junction.

EFFECT: technical result is to ensure OpAmp serviceability in the cryogenic temperature range and exposure to penetrating radiation, as well as obtaining high differential gain values in these conditions.

1 cl, 5 dwg

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Authors

Prokopenko Nikolaj Nikolaevich

Drozdov Dmitrij Gennadevich

Pakhomov Ilya Viktorovich

Zhuk Aleksej Andreevich

Dates

2020-05-25Published

2020-01-30Filed