METHOD OF ELECTROCHEMICAL DEPOSITION OF SILICON-CARBON FILMS ON DIELECTRIC SUBSTRATES Russian patent published in 2020 - IPC C25D7/12 

FIELD: manufacturing technology.

SUBSTANCE: invention relates to production of silicon-carbon films using galvanic processes on dielectric materials and can be used for production of gas sensors, field emission electrodes and electrodes of supercapacitors. Method includes electrochemical deposition of silicon-carbon films from organic silicon- and carbon-containing electrolyte consisting of hexamethyldisilazane in methyl or ethyl alcohol, on substrate located on cathode, to which voltage up to 600 V is supplied relative to anode with current density of up to 70 mA/cm², wherein the distance between the cathode and the anode is set to 1 cm and a silicon-carbon film having a silicon carbide phase SiC is obtained, wherein on the dielectric substrate from the electrically conductive material layer a topology is formed in the form of a set of electrically conductive sites of different geometric shape with a gap between them of up to 200 mcm, in which deposition of silicon-carbon films and their direct contact with the surface of the dielectric substrate, wherein a silicon-carbon film-dielectric type structure is formed.

EFFECT: obtained films have chemical, mechanical and temperature resistance, thickness of films depends on deposition time and volume of electrolyte; this method is technically simple, it requires no complex process equipment and highly-skilled personnel.

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