METHOD OF CONDUCTING MATERIAL ELECTROCHEMICAL DEPOSITION OF SILICON-CARBON FILMS Russian patent published in 2019 - IPC C25D9/00 

FIELD: technological processes.

SUBSTANCE: invention relates to the field of electroplating and can be used in the field of microelectronics to create devices, in particular field emission electrodes, ionizers, gas sensors. Method involves the deposition of a silicon-carbon film from an organic silicon and carbon-containing precursor by an electrochemical method, while the silicon-carbon film is formed by electrodeposition from a precursor consisting of hexamethyldisilazane in methyl or ethyl alcohol, on a conductive substrate located on the cathode, on which, relative to the anode, voltage is applied up to 600 V with a current density of up to 70 mA/cm², and the distance between the cathode and the anode is set to 1 cm.

EFFECT: obtaining silicon-carbon films having a silicon carbide phase SiC and possessing chemical and mechanical resistance on any electrically conductive materials.

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