METHOD FOR CREATING GAS AND VAPOUR SENSOR BASED ON SENSITIVE LAYERS OF METAL-CONTAINING SILICON-CARBON FILMS Russian patent published in 2023 - IPC C25D7/12 

FIELD: electroplating.

SUBSTANCE: invention can be used in the field of sensor technology, namely: when creating structural elements of gas sensors and gas analytical multi-sensor rulers of chemoresistive and impedance types. The method consists in creating sensitive layers of a sensor based on silicon-carbon films, while a metal-containing silicon-carbon film is formed by electrochemical deposition on a dielectric substrate with contact metallization in the form of an interdigital structure from solutions of organic electrolytes of methanol/hexamethyldisilazane composition in a ratio of 9:1, while first the silicon-carbon film is deposited on the substrate for 40 min at a constant voltage of 120 V and an initial current density of 60 mA/cm², then the silicon-carbon film is modified with metal atoms by adding a salt of the metal used to the electrolyte solution, followed by electrochemical deposition for 5 min at a constant voltage of 50 V and an initial current density of 20 mA/cm², after which the silicon-carbon film is re-deposited from an organic electrolyte solution of the composition methanol/hexamethyldisilazane in a ratio of 9:1 for 40 min at a constant voltage of 120 V and the initial current density is 60 mA/cm², then the substrate is annealed. Annealing at 200°C for 120 min is carried out to obtain a sensitive layer of a chemoresistive type sensor, and at a temperature of 500°C for 120 minutes - for impedance type.

EFFECT: formation of metal-containing silicon-carbon films and their use as sensitive layers of chemoresistive and impedance sensors for detecting gases and vapours at operating temperatures not exceeding 100°C and at concentrations not exceeding 100 ppm (for chemoresistive type sensors) or 100 ppb (for impedance type sensors).

3 cl, 3 ex