METHOD FOR FORMING A LAYER OF GOLD ELECTROCHEMICALLY DEPOSITED FROM ELECTROLYTES WITH pH = 6-7 ON THE SURFACE OF SILICON SEMICONDUCTOR STRUCTURES Russian patent published in 2022 - IPC H01L21/288 

FIELD: semiconductor industry.

SUBSTANCE: invention relates to the technology of manufacturing silicon semiconductor devices and integrated circuits, in particular to the field of technologies for obtaining gold-silicon contacts using electrochemical methods for metal deposition. A method for electrochemical deposition of gold on silicon semiconductor structures is proposed, including chemical treatment of a silicon semiconductor wafer in solutions and subsequent electrochemical deposition of gold from gilding electrolytes with pH = 6÷7, while before electrochemical deposition of gold, chemical treatment is carried out in a solution of a mixture consisting of aliphatic alcohol and hydrofluoric acid in a ratio from 1:0 to 1:8.

EFFECT: invention provides the possibility of forming a solid, uniform layer of gold on the surface of the plate, well bonded to a smooth semiconductor silicon plate.

2 cl, 1 tbl