METHOD OF ELECTROCHEMICAL DEPOSITION OF SILICON-CARBON FILMS ALLOYED WITH ATOMS OF TRANSITION METALS ON ELECTROCONDUCTIVE MATERIALS Russian patent published in 2020 - IPC C25D7/12 

FIELD: technological processes.

SUBSTANCE: invention relates to galvanotechnics and can be used in thin-film microelectronics to obtain chemically, mechanically, corrosion- and heat-resistant coatings with specified electric and/or magnetic and/or strength properties. Method comprises forming a silicon-carbon film by electrochemical deposition from electrolyte, consisting of hexamethyldisilazane in methyl or ethyl alcohol and a transition metal salt, on an electrically conductive substrate with a silicon-carbon film deposited by an electrochemical method, located on a cathode, on which a voltage of up to 200 V is applied relative to the anode with current density of up to 50 mA/cm².

EFFECT: obtaining silicon-carbon film alloyed with transition metal atoms, having silicon carbide phases and transition metal oxides, having given electrical and strength properties, chemical, mechanical, corrosion and heat resistance on any electrically conductive materials; this method is technically simple, enables to reduce time for manufacturing processes of devices based on metal-containing silicon-carbon films.

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