METHOD OF DETERMINING INDICES OF DISLOCATION DIRECTION Russian patent published in 2020 - IPC H01L21/66 

FIELD: physics.

SUBSTANCE: invention relates to devices and methods of experimental physics and is intended for investigation of defective structure of crystals. Technical task is determination of directions of dislocations with large deviation angle from normal to plane (111). For such dislocations, etching pits on plane (111) have the shape of an isosceles triangle. In the method of determining indices of directions of dislocations in crystals, which involves selective chemical etching of the crystal and investigation of dislocation pickling pits, etching is carried out in an etching agent to obtain etching pits with size of 0.4–2 mcm, observation of etching pits is carried out using an atomic-force microscope, which measures angles of inclination of faces of etching pits, and based on the obtained data, indices of the direction of dislocations are calculated, according to the invention, angle of inclination of smallest edge of etching cavity is measured and by formulas:

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Z_1,2=3-2x_1,2, where γ is deviation angle of dislocation line from vertical direction, β – inclination angle of face at vertical direction of dislocation, α is the angle of inclination of the smallest face, x_1,2 – roots of the quadratic equation corresponding to possible values of projection on direction [100], z_1,2 – corresponding to possible values on direction [001], calculating two sets of three values (x₁, x₁, z₁) and (x₂, x₂, z₂) and after reduction to integer values determination of direction indices is determined.

EFFECT: technical result consists in determining indices of direction of dislocations, affecting mechanical, physical and chemical (effect of active liquid and gas media) properties of crystals.

1 cl, 2 dwg