FIELD: chemistry.
SUBSTANCE: AlxGayIn1-x-yN (0≤x, 0≤y, x+y≤1) crystalline substrate (12) has a main plane (12m) whose area is at least 10 cm2, in which the said main plane (12m) has an outer region (12w) lying 5 mm from the outer periphery of the said main plane, and an inner region (12n) corresponding to a region distinct from the said outer region. The said inner region (12n) has overall dislocation density of at least 1×102 cm-2 and not greater than 1×106 cm-2.
EFFECT: invention enables to obtain said crystalline substrate as a semiconductor device substrate which is large in size and has suitable dislocation density, and a semiconductor device containing said crystalline substrate.
14 cl, 5 dwg
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