METHOD OF PRODUCING THIN ALUMINIUM NITRIDE FILMS IN MOLECULAR LAYERING MODE Russian patent published in 2020 - IPC C30B25/22 C30B29/38 C30B29/40 C23C16/18 C23C16/34 C23C16/455 C23C16/46 C23C16/56 H01L21/365 B82B3/00 B82Y40/00 

FIELD: chemistry.

SUBSTANCE: invention relates to the field of micro- and nanoelectronics, and more specifically to the technology of obtaining epitaxial films of aluminium nitride, and can be used in the field of acousto- and optoelectronics. Method consists in forming a layer AlN by atomic layer deposition on a sapphire substrate at a temperature up to 260 °C using precursors trimethylaluminum (Al(CH₃)₃) as a source of aluminium atoms and hydrazine (N₂H₄) or hydrazine chloride (N₂H₅Cl) as a nitrogen precursor with subsequent annealing of the obtained structure in an atmosphere of molecular nitrogen at temperature of up to 1400 °C.

EFFECT: invention provides minimum possible thickness of applied layer with high quality characteristics, starting from film-substrate growth boundary, and constant film thickness on entire surface of substrate.

3 cl, 2 dwg, 2 ex