DEVICE FOR CONTROLLED PRODUCTION OF POROUS OXIDES OF SEMICONDUCTORS IN SITU Russian patent published in 2020 - IPC C25D11/00 C25D11/02 B82B1/00 

FIELD: manufacturing technology; electrical engineering.

SUBSTANCE: invention relates to production of porous anode oxides of semiconductors and to study semiconductor materials during their formation (i.e., in situ). Technical problem lies in the possibility of obtaining semiconductor nanostructured materials with the predicted complex of properties. Technical result is achieved by the fact that device for controlled production of porous semiconductor oxides in situ, including electrochemical cell containing electrolyte capacity, cathode, anode in form of semiconductor substrate, radiation source, a radiation passage, an information processing unit, according to the invention, additionally comprises a translucent rotary mirror, a radiation passage window is made at the location of the anode-substrate, wherein the mirror is located outside the cell, radiation source is a laser which is arranged to direct radiation perpendicular to the anode through the mirror and the radiation passage, the apparatus further includes a laser radiation detection unit and a unit for detecting radiation reflected from the semiconductor anode, outputs of the recording units are connected to the input of the information processing unit.

EFFECT: technical result of the disclosed device consists in the possibility of measuring parameters of the obtained material during its formation, in particular porosity, thickness of the porous layer, optical properties and chemical activity.

1 cl, 3 dwg