ELECTROCHEMICAL TREATMENT PROCESS FOR SEMICONDUCTOR PLATES Russian patent published in 1999 - IPC

FIELD: electronic engineering. SUBSTANCE: process involves fixation of plates on anode, arrangement of anode in electrochemical cell in parallel with electrolyte surface, axial rotation of cylindrical electrode-cathode; novelty is that axis of revolution is shifted in plane parallel to surface of plate under treatment; cylindrical electrode surface is made of alternating sections of conductor and insulator. Insulator sections are made in the form of ridges on cylindrical surface arranged along helical line; in the course of electrode displacement, insulator sections come in contact with plate surface and cause its elastic deformation. EFFECT: improved uniformity of structure and properties of porous silicon resulting in increased yield. 5 cl, 1 tbl