METHOD FOR PRODUCING MONOLAYER SILICENE Russian patent published in 2022 - IPC H01L21/00 B82B3/00 

FIELD: nanotechnology.

SUBSTANCE: invention relates to a method for producing epitaxial thin-film materials in vacuum and can be used for producing silicon-containing logic components of nanoelectronics equipment and composite materials for real economy. Method for producing monolayer silicene consists of three stages. At the first stage, the initial substrate of a single crystal of W(110) is purified from extraneous impurities in conditions of ultrahigh vacuum, at the second stage, a 5 to 16 nm layer of Ag(111) is applied by means of molecular beam epitaxy, and at the final stage, a silicon monolayer is applied by means of molecular beam epitaxy to the substrate of Ag(111)/W(110) heated to T=200°C, resulting in the formation of single-layer silicene on the surface.

EFFECT: improvement of the crystalline structure of monolayer silicene (increase in the size of individual domains to 100 nm) is achieved by the use of the layer of Ag(111) as setting the crystallographic structure of silicene, as well as specific parameters for applying atomic silicon (flow velocity V_Si=0.01 to 0.02 nm/min, pressure P_Si=5×l0^-10 mbar) on the substrate of Ag(111)/W(110) heated to T=200°C by means of molecular beam epitaxy.

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