FIELD: technological processes.
SUBSTANCE: invention relates to production of two-dimensional magnetic materials for ultra-compact spintronic devices. Method of producing gadolinium disilicide GdSi2 with structure of intercalated silicene layers by molecular-beam epitaxy is in deposition of atomic flow of gadolinium with pressure PGd (from 0.1 to less than 1)⋅10-8 Torr or PGd (from more than 1 to 10)⋅10-8 Torr on pre-cleaned surface of Si(111) substrate, heated to Ts=350 ÷ less than 400 °C or Ts= more than 400÷450 °C, to formation of gadolinium disilicide film with thickness of not more than 7 nm.
EFFECT: formation of epitaxial films of two-dimensional magnetic material GdSi2 crystalline modification of hP3 with structure of intercalated gadolinium of multilayer silicene on silicon substrates, such structures are homogeneous in thickness, do not contain extraneous phases, are ferromagnetic.
1 cl, 5 dwg, 4 ex
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Authors
Dates
2019-12-27—Published
2018-12-07—Filed