METHOD OF DETERMINING OPTICAL WIDTH OF THE BAND GAP OF NANOSIZED FILMS Russian patent published in 2020 - IPC H01L21/66 

FIELD: measurement.

SUBSTANCE: use for determination of band gap width of nanosized semiconductor and dielectric films. Essence of the invention lies in the fact that the method for determining the optical width of the band gap of nanosized films involves determining spectra of the ellipsometric parameter ψ of the substrate with a nanosized film deposited by vacuum deposition on a substrate from inorganic material, and a substrate without a film depending on the wavelength in the visible and near UV range, wherein difference ψ_p-ψ is determined, where ψ_p is the ellipsometric parameter of the substrate, ψ is the ellipsometric parameter of the substrate with the deposited film, in the range of the investigated spectrum of radiation waves, plotting the dependence ((ψ_p-ψ)hυ)² on hυ (eV), where hυ – energy of photons, and by extrapolation of straight line in high-energy part of spectrum find point of intersection with axis of abscissas.

EFFECT: enabling simplification of the method for determining the band gap width of nanoscale semiconductor and dielectric films.

1 cl, 8 dwg