FIELD: nanotechnology.
SUBSTANCE: invention relates to nanotechnology and can be used in microelectronics to produce thin semiconductor layers on aluminium substrates, as well as radiation-protective coatings of aluminium alloys. Boron nanofilm is obtained by thermal resistive evaporation of boron compound on aluminium substrate heated to 190-200 °C. Boron compound used is boron oxide placed in a tantalum crucible. Thermal resistive evaporation is carried out at temperature of 1,500-1,550 °C in vacuum (1-5)⋅10-6 torr for 10-15 s and distance from evaporator to substrate 40-45 mm. Then annealing is performed in argon medium at temperature of 630-640 °C for 0.5-1.0 hours.
EFFECT: invention simplifies the method of producing a thin boron film by reducing the temperature of the evaporator.
1 cl, 1 dwg
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