TUNNEL-COUPLED SEMI-CONDUCTING HETEROSTRUCTURE Russian patent published in 2010 - IPC H01S5/323 B82B1/00 

FIELD: electricity.

SUBSTANCE: tunnel-coupled semi-conducting heterostructure includes substrate (1) GaAs of n-type conductivity, to which there subsequently applied is buffer layer (2) GaAs of n-type conductivity, at least two laser diode structures (3) separated with tunnel junction (4), and contact layer (5) GaAs of p⁺-type conductivity. Each laser diode structure (3) includes the first wide-band gap emitter layer (6) AlGaAs of n-type conductivity, wide wave-guide (7) GaAs in the centre of which there located is narrow-band gap quantum-well active area (8) InGaAs and the second wide-band gap emitter layer (9) AlGaAs of p⁺-type conductivity. Tunnel junction (4) includes layer (10) GaAs of p⁺-type conductivity, unalloyed quantum-well solid layer (11) GaAs 40-50 angstrem thick and layer (12) GaAs of n-type conductivity.

EFFECT: increasing the capacity of manufactured instrument and its service life.

4 cl, 4 dwg