COMPOSITE TRANSISTOR BASED ON COMPLEMENTARY FIELD-EFFECT TRANSISTORS WITH CONTROL P-N JUNCTION Russian patent published in 2020 - IPC H03F3/45 

FIELD: microelectronics.

SUBSTANCE: invention relates to microelectronics and can be used as an active (amplifier) element (three-terminal element) in various analogue and analogue-digital devices (active RC-filters, operational amplifiers, voltage stabilizers, electronic switches, etc.). Composite transistor based on complementary field-effect transistors with control p-n junction comprises equivalent device gate (1), equivalent device source (2) matched with first (3) power supply bus, equivalent device drain (4) matched with second (5) power supply bus, first (6) input field transistor, gate of which is connected to device equivalent gate (1), second (7) field transistor. Drain of first (6) input field-effect transistor is connected to the device equivalent source (2), source (6) of the input field-effect transistor source is connected to the source of second (7) field-effect transistor, gate of which is connected to the device equivalent source (2), wherein the circuit includes an additional field transistor (8), the source of which is connected to the drain of second (7) field-effect transistor, the gate is connected to the gate of first (6) input field-effect transistor, and its drain is connected to equivalent drain (4) of the device.

EFFECT: design of a radiation-resistant and low-temperature composite transistor on complementary field-effect transistors equivalent in their drain-gate characteristics to a CMOS transistor, which provides high output resistance along a circuit of equivalent drain of the device.

1 cl, 12 dwg