COMPOSITE TRANSISTOR BASED ON COMPLEMENTARY FIELD-EFFECT TRANSISTORS WITH CONTROL P-N JUNCTION Russian patent published in 2020 - IPC H03F1/00 

FIELD: microelectronics.

SUBSTANCE: disclosed is a composite transistor based on complementary field-effect transistors with a control p-n junction, which comprises gate (1), source (2) and device drain (3), first (4) field-effect transistor, gate of which is connected to device gate (1), second (5) field-effect transistor, drain of which is connected to drain (3) of device. First (4) field-effect transistor and second (5) field-effect transistor have different types of channels, the drain of first (4) field-effect transistor is connected to source (2) of the device, its source is connected to the source of second (5) field-effect transistor, and the gate of second (5) field-effect transistor) of the field-effect transistor is connected to source (2) of the device.

EFFECT: design of a composite transistor on complementary transistors, which in its gate transfer characteristics is similar to a CMOS field-effect transistor, id est has characteristic zone of closed state at gate-source voltage not exceeding threshold voltage.

7 cl, 14 dwg