METHOD OF FORMING A METAL Y-SHAPED GATE OF A SUPER-HIGH-FREQUENCY TRANSISTOR Russian patent published in 2020 - IPC H01L21/28 B82Y30/00 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the technology of creating monolithic A_IIIB_V integrated circuits, in particular gates of transistors with critical size of less than 500 nm, used in microwave devices. Shaped metallization is formed using a profile formed in a dielectric Si_xO_yN_z, and not in a polymer resist, wherein thermal processing of the polymer resistive mask is not required to vary the shape of the gate. As a result, the profile in dielectric Si_xO_yN_z is not subject to degradation due to thermal action during vacuum sputtering of metals, is mechanically rigid and well controlled by scanning electron microscopy. Thus, use of the present method enables to form a mechanically stable Y-gate of a microwave transistor, which is not subject to temperature influence on its profile.

EFFECT: technical result of the invention is aimed at increasing stability and reproducibility of the process of creating a Y-gate, as well as increases percentage yield of suitable microwave transistors from a semiconductor wafer.

1 cl, 2 dwg