FIELD: materials science.
SUBSTANCE: invention can be used for manufacturing of sensor and electronic devices, electrodes for current sources and micro fuel cells, molecular scanning membranes and membranes for biological and medical applications. Graphene-like layers on pore walls of silicon structures at a given depth are synthesized by CVD in ethanol vapor in an inert gas under pressure drop conditions in a quartz reactor at temperature of 800–1100 °C. To implement pressure differential mode, pressure is first raised from operating value 1·103 Pa to 5·104 Pa for a minute, then reducing pressure to specified operating value for 5 s and repeating said pressure drop mode after 9–11 minutes.
EFFECT: invention widens the field of use of porous silicon structures and enables to obtain graphene-like layers on inner and outer surfaces of both closed and open pores.
1 cl, 3 dwg, 4 ex
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