SILICON CARBIDE FILM FUNCTIONAL ELEMENT OF DEVICE AND METHOD OF ITS MANUFACTURING Russian patent published in 2024 - IPC H01L21/205 C23C16/32 

FIELD: technologies for obtaining semiconductor materials.

SUBSTANCE: group of inventions relates to the technology of producing semiconductor materials and can be used in making functional elements of semiconductor devices, for example, acoustic membranes of microelectromechanical systems, selective membranes for separating gases, acoustic membranes, etc. Silicon carbide film functional element of the device is made of silicon carbide, wherein the element is made of a two-layer silicon carbide film, the upper layer of which has a mono- or polycrystalline structure, and the lower layer has a nanoporous structure, wherein the film thickness is 0.3–7 mcm. Also disclosed is a method of making a silicon carbide film functional element of the device.

EFFECT: wider range of devices and creation of a new silicon carbide double-layer film functional element of a semiconductor or other device, and accordingly a method of its manufacturing.

3 cl, 5 dwg