METHOD FOR PRODUCING A POROUS LAYER OF A SILICON CARBIDE HETEROSTRUCTURE ON A SILICON SUBSTRATE Russian patent published in 2018 - IPC C23C16/32 C23C16/44 H01L21/205 

FIELD: microelectronics.

SUBSTANCE: invention relates to the field of microelectronic technology, namely to a method for producing a silicon carbide semiconductor heterostructure on a silicon substrate. Layer of silicon carbide is formed by using the lattice atoms of the silicon substrate and carbon atoms, carbon is transferred in a molecular shape in a hydrogen stream at a flow rate of 0.3-0.5 L / min to the reaction zone with the lattice atoms of the silicon substrate, as a result, the conversion rate of the silicon phase into the silicon carbide phase is 2-3.5 μm / hr at a temperature of 1,340-1,360°C. Hydrocarbons are formed in the area of a container with a temperature of 1,000-1,200°C by reversible reaction of carbon with hydrogen and the transfer of hydrocarbons with dopant atoms by a carrier gas of hydrogen to the reaction zone with the lattice atoms of the silicon substrate. P-n junction is formed by doping the impurity of the preceding silicon carbide layer with atoms. Silicon substrate with a meso- and nanoporous layer is used as the silicon substrate. In particular embodiments of the invention, carbon is transferred in molecular shape as carbon tetrachloride vapor in a hydrogen stream in a molar ratio of 1: 4 to 1:10 or as a compound of the carbon-14 isotope with the dopant atom in the form of an acceptor impurity of aluminum, modifying the conductivity type of the silicon carbide phase or in the form of vapors of an organic compound of the carbon-14 isotope, supplied by a stream of hydrogen into the zone of silicon substrates.

EFFECT: reduction in the growth temperature of the semiconductor silicon carbide heterostructure is achieved, growth rate of said heterostructure increases, its effectiveness is increased by reducing the self-absorption effect of beta radiation, mechanical stresses of the discrepancy decrease with the use of the heterostructure for the subsequent epitaxial growth of the semiconductor material.

4 cl, 5 dwg, 6 ex