METHOD OF MANUFACTURING PRODUCTS, CONTAINING SILICON SUBSTRATE WITH SILICON CARBIDE FILM ON ITS SURFACE AND REACTOR OF REALISING THEREOF Russian patent published in 2014 - IPC H01L21/203 

FIELD: chemistry.

SUBSTANCE: method of manufacturing products, which contain a silicon substrate with a silicon carbide film on its surface, is realised in a gas-permeable chamber, placed in a reactor, into which a mixture of gases, including carbon oxide and silicon-containing gas, is supplied, with pressure in the reactor being 20-600 Pa, and a temperature of 950-1400°C. Substrates are placed in the gas-permeable chamber parallel to each other on a rib at a distance of 1-100 mm; the silicon carbide film is formed by a chemical reaction of superficial layers of the substrate silicon with carbon oxide. The gas-permeable chamber serves as a barrier for passing of silicon-containing gas molecules, but passes products of its thermal decomposition.

EFFECT: invention makes it possible to increase the quality of the obtained films with an increase of the process productivity.

5 cl, 7 dwg