FUNCTIONAL ELEMENT OF A SEMICONDUCTOR DEVICE AND METHOD FOR ITS MANUFACTURE Russian patent published in 2023 - IPC H01L21/205 

FIELD: semiconductor materials production.

SUBSTANCE: inventions group relates to a technology for producing semiconductor materials and can be used to create functional elements of semiconductor devices. A functional element of a semiconductor device is a silicon substrate with a near-surface two-layer silicon carbide structure formed with a thickness of (0.5-5) µm. The upper layer has a mono- or polycrystalline structure, and the transition layer underlying it has a nanoporous structure, while at the interface between the silicon substrate and the transition layer there is a decompressed contact due to the presence of flattened gaps, the size of which exceeds the pore size by 2-3 times. A method is also proposed for manufacturing a functional element of a semiconductor device, which is a silicon substrate with a formed near-surface two-layer silicon carbide structure with a thickness of (0.5-5) μm, characterized by placing the substrate in a vacuum furnace and annealing the substrate at a pressure of <25 Pa and a temperature 1250-1400°C for 1-150 min, accompanied by pumping out the formed silicon vapors from the reaction zone, after which CO and/or CO₂ are fed into the furnace and the formation of the said near-surface two-layer silicon carbide structure is ensured by the thermochemical heterogeneous reaction of silicon with CO and/or CO₂ .

EFFECT: increasing the thickness of the SiC layer to 0.5-5 μm and giving the SiC layer a special structure, which will expand the scope of the functional element.

3 cl, 5 dwg