METHOD FOR MICROWAVE PLASMA FORMATION OF CUBIC SILICON CARBIDE FILMS ON SILICON (3C-SiC) Russian patent published in 2015 - IPC H01L21/205 B82B3/00 

FIELD: chemistry.

SUBSTANCE: in the method for plasma formation of cubic silicon carbide films on silicon, cleaning of the surface of a silicon wafer, formation of a layer of nanoporous silicon and deposition of a layer of 3C-SiC are carried out in a single processing procedure in multiple steps - surface cleaning and formation of the layer of nanoporous silicon are carried out using microwave plasma cleaning and etching of the surface of the silicon wafer using CF₄ and O₂ gases, and deposition of the layer of 3C-SiC is carried out using microwave plasma synthesis using SiF₄ (SiH₄), CF₄ and H₂ gases, all processing procedures being carried out in low-pressure microwave plasma with pressure of 1·10^-4-10 Torr, object table temperature of 600-250°C and electrical bias thereof of minus 10 V to minus 300 V.

EFFECT: converting a process into a single processing procedure with variation of the process medium therefor, obtaining thick 3C-SiC layers.