MULTICHANNEL CONVERTER OF DIFFERENTIAL VOLTAGE INTO PARAPHRASE OUTPUT CURRENTS ON COMPLEMENTARY FIELD TRANSISTORS WITH CONTROL P-N JUNCTION Russian patent published in 2020 - IPC H03F3/45 

FIELD: electronics.

SUBSTANCE: invention relates to electronics and can be used as an analogue signal conversion device in the structure of analogue microcircuits for various functional purposes, for example, active RC-filters, operational amplifiers (OA), etc., including those operating at low temperatures and exposure to radiation. Multichannel converter of differential voltage into paraphrase output currents on complementary field transistors with control p-n junction comprises first (1) and second (2) inputs of device, first (3) input field transistor, gate of which is connected to first (1) input of device, drain is connected to first (4) current output of device, matched with first (5) power supply bus, second (6) input field-effect transistor, gate of which is connected to second (2) input of device, and drain is connected to second (7) current output of device, matched with first (5) power supply bus, wherein sources of first (3) and second (6) input field transistors are connected to each other, third (8) input field transistor, gate of which is connected to first (1) input of device, drain is connected to third (9) current output of device, matched with second (10) power supply bus, fourth (11) input field transistor, gate of which is connected to second (2) input of device, and drain is connected to device fourth current output (12) matched with second (10) power supply bus, wherein sources of third (8) and fourth (11) input field transistors are connected to each other, first (13) auxiliary field transistor, drain of which is connected to combined sources of third (8) and fourth (11) input field transistors, and the source is connected to the combined sources of first (3) and second (6) input field transistors, through first (14) auxiliary resistor, second (15) auxiliary field transistor and second (16) auxiliary resistor. Gate of first (13) auxiliary field-effect transistor is connected to second (2) input of the device, the gate of second (15) auxiliary field-effect transistor is connected to first (1) input of the device, source of second (15) auxiliary transistor is connected to combined sources of first (3) and second (6) input field transistors through second (16) auxiliary resistor, and its drain is connected to combined sources of third (8) and fourth (11) input field transistors.

EFFECT: wider range of active operation, which is characterized by voltage of restriction of flow characteristics and has a significant effect on maximum rate of increase in output voltage, for example, OA.

1 cl, 16 dwg