DIFFERENTIAL OPERATIONAL AMPLIFIER ON FIELD-EFFECT TRANSISTORS WITH CONTROL P-N JUNCTION Russian patent published in 2020 - IPC H03F3/45 

Abstract RU 2739577 C1

FIELD: radio equipment.

SUBSTANCE: invention relates to the field of radio equipment. Disclosed is a differential operational amplifier on field-effect transistors with a control p-n junction, in contrast to the prototype, all field-effect transistors use field-effect transistors with p-n jumping, wherein source (10) output field transistor source is connected to second (18) power supply bus through first (15) auxiliary resistor, source of third (13) output field transistor is connected to second (18) power supply bus through second (16) auxiliary resistor, between the combined gates of first (10) and third (13) output field-effect transistors and the combined sources of second (11) and fourth (14) output field-effect transistors, a potential matching circuit (19) is connected, as well as other new elements and connections are provided.

EFFECT: creation of technical processes for a variety of working JFET operational amplifier which provides low values of the systematic component of the zero offset voltage (Uof), and an increased gain factor (Ki) voltage.

1 cl, 6 dwg

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RU 2 739 577 C1

Authors

Bugakova Anna Vitalevna

Prokopenko Nikolai Nikolaevich

Chumakov Vladislav Evgenevich

Dates

2020-12-28Published

2020-08-31Filed