TICN WITH REDUCED GROWTH DEFECTS WITH HIPIMS Russian patent published in 2021 - IPC C23C14/34 C23C14/02 C23C14/06 H01J37/34 

FIELD: technological processes.

SUBSTANCE: invention relates to a method of coating at least one TiCN layer on the surface of the coated substrate using the HiPIMS method. To deposit at least one TiCN layer, at least one Ti-containing target is used as a Ti source to form a TiCN layer, which is sprayed in a reaction atmosphere using a HiPIMS method in a coating chamber. Reaction atmosphere includes at least one inert gas, preferably argon, and at least gaseous nitrogen as reaction gas. To reduce the growth defects during deposition of at least one reaction layer of TiCN-atmosphere further includes a second reaction gas carbonaceous gas, preferably CH₄, which is used as a carbon source to create TiCN-layer. During deposition of TiCN-layer to the coated substrate bias voltage is supplied in bipolar mode, or as carbon source for creation of TiCN-layer at least one graphite target is used, which is sprayed in a coating chamber with a reaction atmosphere only with gaseous nitrogen as a reaction gas using a HiPIMS method. Pulses of power are fed to Ti-containing targets by means of the first energy supply device or the first power supply unit, and on graphite targets with the help of the second power supply device or the second power supply unit.

EFFECT: as a result, a coating with insignificant growth defects is obtained, which do not lead to loss of hardness of the layer or to increase of internal stresses in the layer.

9 cl, 4 dwg