HIPIMS LAYERS Russian patent published in 2017 - IPC C23C14/34 H01J37/34 

FIELD: chemistry.

SUBSTANCE: invention relates to a method for depositing PVD layer systems from the gas phase by spraying onto, at least, one substrate. A bias voltage is applied to the substrate and, at least, one first HIPIMS layer and one second HIPIMS layer are deposited by the HIPIMS method. At least, two partial cathodes are used, made to be used at power densities of 250 W/cm² and more, and with pulse lengths of, at least, 5 ms or more. For the deposition of one of, at least, two HIPIMS layers, a power density of, at least, 250 W/cm² and a pulse length of, at least, 5 ms are used. For the deposition of another HIPIMS layer, a power density of, at least, 250 W/cm² and a pulse length with a shorter duration are used.

EFFECT: elimination of defects in substrate changes during its processing.

8 cl, 3 dwg