DIFFERENTIAL AMPLIFIER ON COMPLEMENTARY FIELD-EFFECT TRANSISTORS WITH HIGH STABILITY OF STATIC MODE Russian patent published in 2020 - IPC H03F3/34 H03F3/45 

Abstract RU 2710930 C1

FIELD: radio engineering and communication.

SUBSTANCE: amplifier contains field-effect transistors and resistors connected so that static mode of the circuit is installed by elements isolated from power supply buses, which will allow to improve attenuation factor values of input in-phase signals and noise suppression ratio on power buses.

EFFECT: technical result consists in creation of conditions, in which in the declared differential amplifier (DA) higher stability of static mode at negative temperatures, as well as increase in attenuation coefficient of input in-phase signals and coefficient of suppression of noise on power buses.

1 cl, 6 dwg

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RU 2 710 930 C1

Authors

Prokopenko Nikolaj Nikolaevich

Budyakov Petr Sergeevich

Pakhomov Ilya Viktorovich

Dates

2020-01-14Published

2019-07-15Filed